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ADPA9007-2 Datasheet(PDF) 27 Page - Analog Devices

Part # ADPA9007-2
Description  DC to 28 GHz, GaAs, pHEMT, 2 W Power Amplifier
PDF  28 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

ADPA9007-2 Datasheet(HTML) 27 Page - Analog Devices

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Data Sheet
ADPA9007-2
MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE, GAAS, MMICS
analog.com
Rev. 0 | 27 of 28
Attach the die directly to the ground plane with high thermal con-
ductive epoxy (see the Handling Precautions section, the Mounting
section, and the Wire Bonding section).
Place the microstrip substrates as close to the die as possible to
minimize wire bond length. Typical die to substrate spacing is 0.076
mm to 0.152 mm (3 mil to 6 mil).
Figure 86. Input Wire Bonding and Substrate Spacing
Figure 87. Output Wire Bonding and Substrate Spacing
Handling Precautions
To avoid permanent damage, follow these storage, cleanliness,
static sensitivity, transient, and general handling precautions:
►
Place all bare die in either waffle- or gel-based ESD protective
containers and then seal the die in an ESD protective bag for
shipment. After the sealed ESD protective bag is opened, store
all dies in a dry nitrogen environment.
►
Handle the chips in a clean environment. Do not attempt to clean
the chip using liquid cleaning systems.
►
Follow ESD precautions to protect against ESD strikes.
►
While bias is applied, suppress instrument and bias supply tran-
sients. Use shielded signal and bias cables to minimize inductive
pickup.
►
Handle the chip along the edges with a vacuum collet or with
a sharp pair of tweezers. The surface of the chip has fragile air
bridges and must not be touched with a vacuum collet, tweezers,
or fingers.
Mounting
Before the die is attached, apply enough epoxy to the mounting
surface so that a thin epoxy fillet is observed around the perimeter
of the chip after it is placed into position. Cure the epoxy per the
schedule of the manufacturer.
Wire Bonding
RF bonds made with 1 mil gold wire are recommended for the RF
ports. These bonds must be thermosonically bonded with a force
of 40 g to 60 g. Thermosonically bonded DC bonds of 0.025 mm
diameter (0.001 in) are recommended. Create ball bonds with a
force of 40 g to 50 g and wedge bonds with a force of 18 g to
22 g. Create all bonds with a nominal stage temperature of 150°C.
Apply the minimum amount of ultrasonic energy (depending on the
process and package being used) to achieve reliable bonds. Keep
all bonds as short as possible, less than 0.31 mm (12 mil).



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