
1-2
RF2370
Rev A4 050727
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +6.0
VDC
Input RF Level
+5 (see note)
dBm
Current Drain, ICC
32
mA
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
NOTE: Exceeding any one or a combination of the above maximum rating
limits may cause permanent damage. Input RF transients to +15dBm will
not harm the device. For sustained operation at inputs >+5dBm, a small
dropping resistor is recommended in series with the VCC in order to limit
the current due to self-biasing to <32mA.
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Operating Range
TAMB=+25°C, VCC=3.0V
Frequency Range
900
4000
MHz
WLAN Low Noise
Amplifier
Frequency
2450
MHz
HIGH GAIN MODE
Gain Select<0.8V, VBIAS=3V, T=+25°C
Gain
12.0
14.0
dB
Noise Figure
1.3
1.5
dB
Input IP3
+7.0
dBm
IIP3 will improve if ICC is raised above 7mA.
Output VSWR
1.7:1
2:1
Current Drain
7
mA
BYPASS MODE
Gain Select>1.8V, VBIAS=0V
Gain
-4.0
-3.0
-2.0
dB
Note: Bypass mode insertion loss will
degrade gradually as VCC goes below 2.7V.
Input IP3
+16.0
+20.0
dBm
Output VSWR
1.6:1
Current Drain
2.0
3.0
mA
Power Supply
Voltage (VCC)3
V
VSELECT Low
0.8
V
High Gain mode.
Select<0.8V, VBIAS=3V
VSELECT High
1.8
V
Low Gain mode.
Select>1.8V, VBIAS=0V
Power Down
0
10
μA
Gain Select<0.8V, VBIAS=0V, VCC=0V
Bias note: Due to the presence of ESD protection circuitry on the RF2370, the maximum allowable collector bias voltage (pin 4) is 4.0V.
Higher supply voltages such as 5V are permissible if a series resistor is used to drop VCC to <4.0V for a given ICC.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).