1-1
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
RF IN
GND1
BIAS
RF OUT
GND2
GAIN SELECT
Logic
Control
1
2
3
6
5
4
RF2370
3V LOW NOISE AMPLIFIER
• WLAN LNA with Bypass Feature
• CDMA PCS LNA with Bypass Feature
• MMDS LNA with Bypass Feature
• General Purpose Amplification
• Commercial and Consumer Systems
The RF2370 is a switchable low noise amplifier with a
very high dynamic range designed for digital cellular and
WLAN applications. The device functions as an outstand-
ing front end low noise amplifier. The bias current may be
set externally. The IC is featured in a standard SOT
6-lead plastic package.
• Low Noise and High Intercept Point
• Adjustable Bias Current
• Power Down Control
• Low Insertion Loss Bypass Feature
• 1.8V to 5V Operation (See Note: Page 2)
• 1.5GHz to 3.8GHz Operation
RF2370
3V Low Noise Amplifier
RF2370PCBA-410 Fully Assembled Evaluation Board (WLAN) usable
from 1.9GHz to 4GHz with standard tune
4
Rev A4 050727
0.10
MAX.
0.90
0.70
1.30
1.00
1.90
3.10
2.70
0.50
0.35
3.00
2.60
1.80
1.40
9°
1°
0.25
0.10
0.37 MIN.
Shaded lead is pin 1.
Dimensions in mm.
*When Pin 1 is in upper left,
text reads downward
(as shown).
Package Style: SOT 6-Lead
RoHS Compliant & Pb-Free Product
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