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Description

Top View

8

1

2

3

4

5

6

7

D

D

D

D

G

S

A

S

S

A

Parameter

Max.

Units

ID @ TA = 25°C

10 Sec. Pulsed Drain Current, VGS @ 10V9.7

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V8.5

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V5.4

IDM

Pulsed Drain Current 

34

PD @TA = 25°C

Power Dissipation

2.5

W

Linear Derating Factor

0.02

W/°C

VGS

Gate-to-Source Voltage

±20

V

dv/dt

Peak Diode Recovery dv/dt ‚

5.0

V/ns

TJ,TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

Absolute Maximum Ratings

A

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

RθJA

Maximum Junction-to-Ambient„

–––

50

°C/W

IRF7403

Generation VTechology

Ultra Low On-Resistance N-

ChannelMosfet

Surface Mount

Dynamic dv/dt Rating

Fast Switching

Lead-Free

The SOP-8 has been modified throuah a customized leadframe

for enhanced thermal characteristics and multiple-die capability

making it ideal in a variety of power applications. With these im-

provements, multiple devices can be used in an application with

dramatically reduced board space.The package is designed for

vapor phase. infra red. or wave so derina techniaues.Power dis-

sipation of qreater than 0.8W is possible in a typical PCB mount

application.

Rev:2023A2

1

Features