Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

30

––– –––

V

VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA

––– ––– 0.022

VGS = 10V, ID = 4.0A ƒ

––– ––– 0.035

VGS = 4.5V, ID = 3.4A ƒ

VGS(th)

Gate Threshold Voltage

1.0 ––– –––

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

8.4 ––– –––

S

VDS = 15V, ID = 4.0A

––– –––

1.0

VDS = 24V, VGS = 0V

––– –––

25

VDS = 24V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage

––– ––– 100

VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -100

VGS = -20V

Qg

Total Gate Charge

––– –––

57

ID = 4.0A

Qgs

Gate-to-Source Charge

––– –––

6.8

nC

VDS = 24V

Qgd

Gate-to-Drain ("Miller") Charge

––– –––

18

VGS = 10V, See Fig. 6 and 12 ƒ

td(on)

Turn-On Delay Time

–––

10

–––

VDD = 15V

tr

Rise Time

–––

37

–––

ID = 4.0A

td(off)

Turn-Off Delay Time

–––

42

–––

RG = 6.0Ω

tf

Fall Time

–––

40

–––

RD = 3.7Ω, See Fig. 10 ƒ

Between lead tip

and center of die contact

Ciss

Input Capacitance

––– 1200 –––

VGS = 0V

Coss

Output Capacitance

––– 450 –––

pF

VDS = 25V

Crss

Reverse Transfer Capacitance

––– 160 –––

ƒ = 1.0MHz, See Fig. 5

Notes:

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode) 

p-n junction diode.

VSD

Diode Forward Voltage

––– –––

1.0

V

TJ = 25°C, IS = 2.0A, VGS = 0V ƒ

trr

Reverse Recovery Time

–––

52

78

ns

TJ = 25°C, IF = 4.0A

Qrr

Reverse RecoveryCharge

–––

93

140

nC

di/dt = 100A/µs ƒ

ton

Forward Turn-On Time

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ ISD ≤ 4.0A, di/dt ≤ 180A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.

Source-Drain Ratings and Characteristics

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

––– –––

34

––– –––

3.1

A

S

D

G

IGSS

IDSS

Drain-to-Source Leakage Current

LS

Internal Source Inductance

––– 4.0

–––

LD

Internal Drain Inductance

––– 2.5

–––

nH

ns

nA

µA

Ω

RDS(ON)

Static Drain-to-Source On-Resistance

S

D

G

„ Surface mounted on FR-4 board, t ≤ 10sec.

Rev:2023A2

2

IRF7403