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IRLML6344 Datasheet(PDF) 4 Page - EVER SEMICONDUCTOR CO.,LIMITED

Part # IRLML6344
Description  MOSFET
PDF  8 Pages
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Manufacturer  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Direct Link  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

IRLML6344 Datasheet(HTML) 4 Page - EVER SEMICONDUCTOR CO.,LIMITED

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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0.0
4.0
8.0
12.0
16.0
20.0
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VDS= 24V
VDS= 15V
VDS= 6.0V
ID= 5.0A
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
TJ = 25°C
TJ = 150°C
VGS = 0V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
TA = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
8
Rev:2023A2
4
Typical Electrical Characteristics
IRLML6344



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