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IRLML6344 Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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IRLML6344 Datasheet(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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1 / 8 page ![]() Application(s) D S G 3 1 2 Load/ System Switch Benefits Absolute Maximum Ratings Symbol Parameter Units VDS Drain-Source Voltage V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TA = 25°C Maximum Power Dissipation PD @TA = 70°C Maximum Power Dissipation Linear Derating Factor W/°C VGS Gate-to-Source Voltage V TJ, TSTG Junction and Storage Temperature Range °C Thermal Resistance Symbol Parameter Typ. Max. Units RθJA Junction-to-Ambient e ––– 100 RθJA Junction-to-Ambient (t<10s) f ––– 99 W °C/W A Max. 5.0 4.0 -55 to + 150 ± 12 0.01 30 1.3 0.8 25 Lower Conduction Losses Multi-vendor compatibility Environmentally friendly Increased Reliability IRLML6344 8 Rev:2023A2 1 SOT–23 1. GATE 2. SOURCE 3. DRAIN VDS (V) = 30V RDS(ON) 29m (VGS = 4.5V) RDS(ON) 37m (VGS = 2.5V) Features |
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