Electronic Components Datasheet Search
  English  ▼

X  

IRLML6344 Datasheet(PDF) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

Part # IRLML6344
Description  MOSFET
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Direct Link  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

IRLML6344 Datasheet(HTML) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

  IRLML6344 Datasheet HTML 1Page - EVER SEMICONDUCTOR CO.,LIMITED IRLML6344 Datasheet HTML 2Page - EVER SEMICONDUCTOR CO.,LIMITED IRLML6344 Datasheet HTML 3Page - EVER SEMICONDUCTOR CO.,LIMITED IRLML6344 Datasheet HTML 4Page - EVER SEMICONDUCTOR CO.,LIMITED IRLML6344 Datasheet HTML 5Page - EVER SEMICONDUCTOR CO.,LIMITED IRLML6344 Datasheet HTML 6Page - EVER SEMICONDUCTOR CO.,LIMITED IRLML6344 Datasheet HTML 7Page - EVER SEMICONDUCTOR CO.,LIMITED IRLML6344 Datasheet HTML 8Page - EVER SEMICONDUCTOR CO.,LIMITED  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
D
S
G
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
–––
0.02
–––
V/°C
–––
22
29
–––
27
37
VGS(th)
Gate Threshold Voltage
0.5
0.8
1.1
V
IDSS
–––
–––
1.0
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
RG
Internal Gate Resistance
–––
1.7
–––
Ω
gfs
Forward Transconductance
19
–––
–––
S
Qg
Total Gate Charge
–––
6.8
–––
Qgs
Gate-to-Source Charge
–––
0.3
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
2.4
–––
td(on)
Turn-On Delay Time
–––
4.2
–––
tr
Rise Time
–––
5.6
–––
td(off)
Turn-Off Delay Time
–––
22
–––
tf
Fall Time
–––
9.1
–––
Ciss
Input Capacitance
–––
650
–––
Coss
Output Capacitance
–––
65
–––
Crss
Reverse Transfer Capacitance
–––
46
–––
Source - Drain Ratings and Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.2
V
trr
Reverse Recovery Time
–––
10
15
ns
Qrr
Reverse Recovery Charge
–––
3.8
5.7
nC
di/dt = 100A/μs
d
VGS = 12V
VGS = -12V
TJ = 25°C, IS = 5.0A, VGS = 0V
d
integral reverse
p-n junction diode.
VDS = 10V, ID = 5.0A
ID = 5.0A
ID = 1.0A
TJ = 25°C, VR = 15V, IF=1.3A
MOSFET symbol
showing the
VDS =15V
Conditions
VGS = 4.5V
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
RG = 6.8
Ω
VGS = 4.5V
d
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 5.0A
d
VDS = VGS, ID = 10μA
VDS =24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
RDS(on)
VGS = 2.5V, ID = 4.0A
d
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
μA
m
Ω
VDD =15V
d
nA
nC
ns
pF
A
1.3
25
–––
–––
–––
–––
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width ≤ 400μs; duty cycle ≤ 2%.
ƒ Surface mounted on 1 in square Cu board
8
Rev:2023A2
2
IRLML6344



Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com