IRLML9301 datasheet(4/8 Pages) EVVOSEMI

Part #	IRLML9301

Description	P−CHANNEL MOSFET

PDF	8 Pages

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Manufacturer	EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]

Direct Link	https://www.evvosemi.com

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Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

-VDS, Drain-to-Source Voltage (V)

100

1000

10000

VGS = 0V,

f = 1 KHZ

Ciss = Cgs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

0246

QG, Total Gate Charge (nC)

VDS= -24V

VDS= -15V

VDS= -6V

ID= -3.6A

0.3

0.5

0.7

0.9

1.1

-VSD, Source-to-Drain Voltage (V)

0.1

100

TJ = 25°C

TJ = 150°C

VGS = 0V

100

-VDS, Drain-to-Source Voltage (V)

0.01

0.1

100

OPERATION IN THIS AREA

LIMITED BY R DS(on)

TA = 25°C

Tj = 150°C

Single Pulse

100μsec

1msec

10msec

Rev:2023A2

IRLML9301

P−CHANNEL MOSFET

IRLML9301 Datasheet(PDF) 4 Page - EVER SEMICONDUCTOR CO.,LIMITED

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