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IRLML9301 Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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IRLML9301 Datasheet(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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1 / 8 page ![]() Benefits S G 1 2 D 3 Application(s) • System/Load Switch Symbol Parameter Units VDS Drain-Source Voltage V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TA = 25°C Maximum Power Dissipation PD @TA = 70°C Maximum Power Dissipation Linear Derating Factor W/°C VGS Gate-to-Source Voltage V TJ, TSTG Junction and Storage Temperature Range °C Thermal Resistance Symbol Parameter Typ. Max. Units RθJA Junction-to-Ambient e RθJA Junction-to-Ambient (t<10s) f °C/W A Max. -3.6 -2.9 -55 to + 150 ± 20 0.01 -30 1.3 0.8 -15 W Lower switching losses Multi-vendor compatibility Easier manufacturing Environmentally friendly Increased reliability Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. Surface mounted on 1 in square Cu board IRLML9301 FEATURES VDS (V) = -30V RDS(ON) 64m (V GS = -10V) RDS(ON) 103m (V GS = -4.5V) P−CHANNEL MOSFET SOT–23 1. GATE 2. SOURCE 3. DRAIN Rev:2023A2 1 100 99 |
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