IRLML9301 datasheet(2/8 Pages) EVVOSEMI

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Electric Characteristics @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

-30

ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient

0.02

V/°C

103

VGS(th)

Gate Threshold Voltage

-1.3

-2.4

IDSS

150

IGSS

Gate-to-Source Forward Leakage

-100

Gate-to-Source Reverse Leakage

100

Internal Gate Resistance

gfs

Forward Transconductance

5.0

Total Gate Charge

4.8

Qgs

Gate-to-Source Charge

1.2

Qgd

Gate-to-Drain ("Miller") Charge

2.5

td(on)

Turn-On Delay Time

9.6

Rise Time

td(off)

Turn-Off Delay Time

Fall Time

Ciss

Input Capacitance

388

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Source - Drain Ratings and Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode)

VSD

Diode Forward Voltage

-1.2

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

7.2

-1.3

-15

VDD =-15Vd

VDS = VGS, ID = -10μA

VDS =-24V, VGS = 0V

VDS = -24V, VGS = 0V, TJ = 125°C

RDS(on)

VGS = -4.5V, ID = -2.9A d

Static Drain-to-Source On-Resistance

Drain-to-Source Leakage Current

μA

Conditions

VGS = 0V, ID = -250μA

Reference to 25°C, ID = -1mA

VGS = -10V, ID = -3.6A d

MOSFET symbol

showing the

VDS =-15V

Conditions

VGS = -4.5V

VGS = 0V

VDS = -25V

ƒ = 1.0KHz

RG = 6.8

VGS = -4.5V d

di/dt = 100A/μs

VGS = -20V

VGS = 20V

TJ = 25°C, IS = -1.3A, VGS = 0V d

integral reverse

p-n junction diode.

VDS = -10V, ID =-3.6A

ID = -3.6A

ID = -1A

TJ = 25°C, VR = -24V, IF=-1.3A

Rev:2023A2

IRLML9301

P−CHANNEL MOSFET

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