FDV305 datasheet(3/5 Pages) EVVOSEMI

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Typical Characteristics

0.5

1.5

0.5

1.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 4.5V

2.0V

3.0V

2.5V

0.8

1.2

1.4

1.6

1.8

00.5

11.5

ID, DRAIN CURRENT (A)

VGS = 2.5V

4.5V

3.0V

4.0V

3.5V

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.6

0.8

1.2

1.4

1.6

-50

-25

100

125

150

TJ, JUNCTION TEMPERATURE (

oC)

ID = 0.9A

VGS = 4.5V

0.1

0.2

0.3

0.4

0.5

0.6

VGS, GATE TO SOURCE VOLTAGE (V)

ID = 0.5A

TA = 125

TA = 25

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0.5

1.5

2.5

0.5

1.5

2.5

VGS, GATE TO SOURCE VOLTAGE (V)

TA = -55

25oC

125oC

VDS = 5V

0.0001

0.001

0.01

0.1

0.2

0.4

0.6

0.8

1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

VGS = 0V

TA = 125

-55

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

N-Channel 20 V (D-S) MOSFET

FDV305

Rev:2023A2

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