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FDV305 Datasheet(PDF) 4 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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FDV305 Datasheet(HTML) 4 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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4 / 5 page ![]() Typical Characteristics 0 1 2 3 4 5 00.5 11.5 Qg, GATE CHARGE (nC) ID = 0.9A VDS = 5V 10V 15V 0 30 60 90 120 150 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) CISS COSS CRSS f = 1 MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms 100 µs RDS(ON) LIMIT VGS = 4.5V SINGLE PULSE RθJA = 357 oC/W TA = 25 oC 10ms 1ms 0 1 2 3 4 5 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE RθJA = 357°C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA(t) = r(t) * RθJA RθJA = 357 oC/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. N-Channel 20 V (D-S) MOSFET FDV305 Rev:2023A2 4 |
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