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FDV305 Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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FDV305 Datasheet(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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1 / 5 page  Applications Load switch Battery protection Power management D S G Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ± 12 V ID Drain Current – Continuous 0.9 A – Pulsed 2 PD Maximum Power Dissipation 0.35 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W N-Channel 20 V (D-S) MOSFET FDV305 Rev:2023A2 1 SOT–23 1. GATE 2. SOURCE 3. DRAIN Features VDS (V) = 20V RDS(ON) 45m (V GS = 4.5V) RDS(ON) 60m (V GS = 2.5V) |
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