SA8016 datasheet(7/20 Pages) PHILIPS

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Philips Semiconductors

Product specification

SA8016

2.5GHz low voltage fractional-N synthesizer

1999 Nov 04

SYMBOL

UNIT

MAX.

TYP.

MIN.

CONDITIONS

PARAMETER

Phase noise (RSET = 7.5 kΩ, CP = 00)

Synthesizer’s contribution to close-in phase noise

of 900 MHz RF signal at 1 kHz offset.

GSM

fREF = 13MHz, TCXO,

–

–90

–

dBc/Hz

Synthesizer’s contribution to close-in phase noise

of 1800 MHz RF signal at 1 kHz offset.

fREF = 13MHz, TCXO,

fCOMP = 1MHz

indicative, not tested

–

–83

–

dBc/Hz

(f)

Synthesizer’s contribution to close-in phase noise

of 800 MHz RF signal at 1 kHz offset.

TDMA

fREF = 19.44MHz, TCXO,

–

–85

–

dBc/Hz

Synthesizer’s contribution to close-in phase noise

of 2100 MHz RF signal at 1 kHz offset.

fREF = 19.44MHz, TCXO,

fCOMP = 240kHz

indicative, not tested

–

–77

–

dBc/Hz

Interface logic input signal levels; pins 13, 14, 15, 16

VIH

HIGH level input voltage

0.7*VDD

–

VDD+0.3

VIL

LOW level input voltage

–0.3

–

0.3*VDD

ILEAK

Input leakage current

logic 1 or logic 0

–0.5

–

+0.5

µA

Lock detect output signal (in push/pull mode); pin 1

VOL

LOW level output voltage

Isink = 2mA

–

0.4

VOH

HIGH level output voltage

Isource = –2mA

VDD–0.4

–

NOTES:

1. ISET =

SET

bias current for charge pumps.

2. The relative output current variation is defined as:

OUT

+ 2.

2–I1)

I(I

2 ) I1)I

; with V

1 + 0.7V, V2 + VDDCP –0.8V (See Figure 4.)

CURRENT

VPH

SR00602

IZOUT

Figure 4.

Relative Output Current Variation

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