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SA910 Datasheet(PDF) 6 Page - NXP Semiconductors

Part # SA910
Description  Variable gain RF predriver amplifier
PDF  13 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

SA910 Datasheet(HTML) 6 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
SA910
Variable gain RF predriver amplifier
1997 Aug 12
6
PIN DESCRIPTIONS
Pin
No.
Mnemonic
Function
1
VCC1
Power supply for power sense loop and off-chip bias
2
VREF
Power sense reference voltage input
3
GND
Ground
4
RFIN
Pre-driver input
5
GND
Ground
6
GND
Ground
7
OUTLPF
Power sense detected output
8
GND
Ground
9
VC
Gain control input
10
VCC BIAS
Power supply for on-chip bias
11
OFFSET
External power amp bias offset adjustment
12
PWRUP
Power-up input
13
GND
Ground
14
RFOUT2
Pre-driver output (open collector)
15
GND
Ground
16
GND
Ground
17
RFOUT1
Output of first stage (open collector)
18
GND
Ground
19
BIASOUT
Output to bias external power amplifier stage
20
PSENSE
Power sense input
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNITS
VCC1/VCCBIAS
DC supply voltages
-0.3 to +6.0
V
Voltage applied to any other pin1
-0.3 to (VCC1 + 0.3)
V
PD
Power dissipation
1.0
W
PIN
Input drive power
5
mW
PDET
Input detect power
20
mW
PL
Load power
500
mW
TSTG
Storage temperature range
-65 to +150
°C
NOTE:
1. Except RFOUT1 and RFOUT2 which can have 8V max.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
RATING
UNITS
VCC1/VCCBIAS
Supply voltage
3 to 3.6
V
TA
Operating ambient temperature range
-40 to +85
°C
NOTE:
1. Rth = 75° c/w



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