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SA910 Datasheet(PDF) 11 Page - NXP Semiconductors |
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SA910 Datasheet(HTML) 11 Page - NXP Semiconductors |
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11 / 13 page ![]() Philips Semiconductors Product specification SA910 Variable gain RF predriver amplifier 1997 Aug 12 11 SR01532 –20 20 15 10 5 25 –16 –12 –8 –4 T = 25 °C, Input Freq = 830 MHz dBm –2 0 0 –6 –10 –14 –18 30 35 40 VCC = 3.0 V, VC = 2.0 V VCC = 5.5 V, VC = 1.7 V VCC = 2.7 V, VC = 2.5 V Figure 17. PAE VS Input Power SR01533 0W AMBIENT OPERATING TEMPERATURE POWER DISSIPATION (WATTS) 1W 135 °C 60 °C P = D (135 – T ) A °C 75 °C/W Figure 18. Power De–Rating Curve SR01534 –20 –30 –40 –10 VCC1 = 3.0V, VCC2 = 3.6V, T = 25°C VC (VOLTS) PIN = –20dBm@830 MHz 0 10 20 30 40 Figure 19. Small Signal Gain VS VC |
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