| Electronic Components Datasheet Search |
|
SA910 Datasheet(PDF) 8 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
SA910 Datasheet(HTML) 8 Page - NXP Semiconductors |
|
8 / 13 page ![]() Philips Semiconductors Product specification SA910 Variable gain RF predriver amplifier 1997 Aug 12 8 DC ELECTRICAL CHARACTERISTICS VCC1 = VCCBIAS = +3V, VCC (RFOUT1, RFOUT2) = 3.6V; TA = 25°C, ZS = ZL = 50Ω, ; unless otherwise stated. SYMBOL PARAMETER TEST LIMITS UNITS SYMBOL PARAMETER CONDITIONS MIN -3 σ TYP +3 σ MAX UNITS VCC Power supply voltage range 2.7 3.0 5.5 V ICC Total DC current from all VCC Pin 12 = HIGH; Pin 9 > VBE 210 300 mA IZB ICC under zero bias mode Pin 12 = HIGH; Pin 9 < VBE 0.7 mA IOFF Powerdown current Pin 12 = LOW 10 µA I Input current to PWRUP Pin 12 = HIGH 100 µA IPU Input current to PWRUP Pin 12 = LOW 10 µA V Input level for PWRUP (Pin 12) Pin 12 = LOW 0 0.3VCC V VPU Input level for PWRUP (Pin 12) Pin 12 = HIGH 0.7VCC VCC V IREF Input current to VREF (Pin 2) 1 µA VREF Power control reference voltage (Pin 1) 0 2.0 V VBIAS BiasOUT voltage (Pin 19) (unadjusted) VC = 2.0V 0.68 V IBIAS DC current available @ Bias-OUT (Pin 19) 30 mA VC Control voltage (Pin 9) range 0 2 V |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |