P-CH Electrical Characteristics (TA=25

unless otherwise noted

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=-250A

-20

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=-20V,VGS=0V

-

-

-1

A

Gate-Body Leakage Current

IGSS

VGS=±12V,VDS=0V

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250A

-0.4

-0.7

-1

V

VGS=-4.5V, ID=-2.5 A

-

60

75

m

Drain-Source On-State Resistance

RDS(ON)

VGS=-2.5V, ID=-2A

-

81

100

m

Forward Transconductance

gFS

VDS=-5V,ID=-2.5A

-

9.5

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

-

325

-

PF

Output Capacitance

Coss

-

63

-

PF

Reverse Transfer Capacitance

Crss

VDS=-10V,VGS=0V,

F=1.0MHz

-

37

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

-

11

-

nS

Turn-on Rise Time

tr

-

5.5

-

nS

Turn-Off Delay Time

td(off)

-

22

-

nS

Turn-Off Fall Time

tf

VDD=-10V, RL=5

VGS=-4.5V,RGEN=3

-

8

-

nS

Total Gate Charge

Qg

-

3.2

-

nC

Gate-Source Charge

Qgs

-

0.6

-

nC

Gate-Drain Charge

Qgd

VDS=-10V,ID=-2A,

VGS=-4.5V

-

0.9

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=-3A

-

-

-1.2

V

Diode Forward Current

(Note 2)

IS

-

-

-3

A

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ” 10 sec.

3. Pulse Test: Pulse Width ” 300 s, Duty Cycle ” 2%.

4. Guaranteed by design, not subject to production