N-CH Electrical Characteristics (TA=25

unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250A

20

22

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=20V,VGS=0V

-

-

1

A

Gate-Body Leakage Current

IGSS

VGS=±12V,VDS=0V

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250A

0.5

0.75

1.2

V

VGS=2.5V, ID=2.8A

-

36

55

m

Drain-Source On-State Resistance

RDS(ON)

VGS=4.5V, ID=3A

-

28

35

m

Forward Transconductance

gFS

VDS=5V,ID=3A

-

8

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

-

260

-

PF

Output Capacitance

Coss

-

48

-

PF

Reverse Transfer Capacitance

Crss

VDS=10V,VGS=0V,

F=1.0MHz

-

27

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

-

2.5

-

nS

Turn-on Rise Time

tr

-

3.2

-

nS

Turn-Off Delay Time

td(off)

-

21

-

nS

Turn-Off Fall Time

tf

VDD=10V, RL=3.3

VGS=4.5V,RGEN=6

-

3

-

nS

Total Gate Charge

Qg

-

2.9

5

nC

Gate-Source Charge

Qgs

-

0.4

-

nC

Gate-Drain Charge

Qgd

VDS=10V,ID=3A,

VGS=4.5V

-

0.6

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=3 A

-

-

1.2

V

Diode Forward Current

(Note 2)

IS

-

-

3

A

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ” 10 sec.

3. Pulse Test: Pulse Width ” 300 s, Duty Cycle ” 2%.

4. Guaranteed by design, not subject to production