N and P-Channel Enhancement Mode Power MOSFET

Description

The RM2003 uses advanced trench technology to provide

excellent RDS(ON) and low gate charge . The complementary

MOSFETs may be used to form a level shifted high side

switch, and for a host of other applications.

General Features

N-Channel

VDS = 20V,ID =3A

RDS(ON) < 35m

@ VGS=4.5V

RDS(ON) < 55m

@ VGS=2.5V

P-Channel

VDS = -20V,ID = -3A

RDS(ON) < 75m

@ VGS=-4.5V

RDS(ON) < 100m

@ VGS=-2.5V

High power and current handing capability

Lead free product is acquired

Surface mount package

Marking and pin Assignment

SOT-23-6L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

2003

RM2003

SOT-23-6L

Ø180mm

8mm

3000

units

Absolute Maximum Ratings (TA=25

unless otherwise noted)

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

VDS

20

-20

V

Gate-Source Voltage

VGS

±12

±12

V

TA=25

3

-3

Continuous Drain Current

TA=70

ID

2.4

-2.4

A

Pulsed Drain Current

(Note 1)

IDM

13

-13

A

Maximum Power Dissipation

TA=25

PD

0.8

0.8

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient

(Note2)

R JA

N-Ch

156

/W

Thermal Resistance,Junction-to-Ambient

(Note2)

R JA

P-Ch

156

/W

N-channel

P-channel

2003

RM2003

Halogen-free

P/N suffix V means AEC-Q101 qualified, e.g:RM2003V

201 02/15

REV:

9

-

B