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RF5152 Datasheet(PDF) 2 Page - RF Micro Devices

Part # RF5152
Description  3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER
PDF  10 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RF5152 Datasheet(HTML) 2 Page - RF Micro Devices

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RF5152
Rev A10 DS061221
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +5.0
V
Power Control Voltage (V
REG)
-0.5 to +3.5
VDC
DC Supply Current
600
mA
Input RF Power
+5
dBm
Operating Ambient Temperature
-10 to +85
°C
Storage Temperature
-40 to +150
°C
Moisture Sensitivity
JEDEC Level 2
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
Temperature=+25°C, VCC=3.3V,
VREG=2.8V, Frequency=2450MHz,
pulsed at 1% to 100% duty cycle,
circuit per evaluation board schematic
Frequency
2.40
2.50
GHz
IEEE802.11g
IEEE802.11n
Output Power
18
IEEE802.11g modulation, 54Mbit/s, 64QAM,
OFDM modulation
EVM*
2.5
3.3
%
RMS, mean
IP3
33
dBm
Gain
32
34
37
dB
-11dBm Pin
Gain Variance
1.5
±dB
-15°C to +85°C
Input Impedance
49
50
51
Ω
Internally Matched Input and Interstage
Output VSWR
10:1
The PA is stable, no spurs above -43dBm
Power Detector (P_detect)
POUT=8dBm
0.2
0.3
VDC
POUT=18dBm
0.7
0.9
1.1
VDC
Power Supply
Operating Voltage
3.0
3.3
3.6
V
VREG (Bias) Voltage (VB1/VB2,
VB3)
2.7
2.8
3.0
VDC
Current Consumption
85
130
170
mA
RF P
OUT =+18 dBm, V
CC=3.3V,
54Mbps OFDM <2.5% EVM
Quiescent Current
45
75
105
mA
VCC=+3.3VDC; RF In=OFF; VREG OFF
VREG (Bias) Current (Total)
1
2
6
mA
VCC=3.3V
Input Return Loss
-15
-10
dB
Turn-on Time**
300
700
1000
nS
Output stable to within 90% of final gain
Notes:
*The EVM specification is obtained with a signal generator that has an EVM floor of less than 0.7%.
**The PA must operate with gated bias voltage input at 1% to 99% duty cycles without any EVM or other parameter degradation.
Caution! ESD sensitive device.
The information in this publication is believed to be accurate and reliable. How-
ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
or patent rights of RFMD. RFMD reserves the right to change component cir-
cuitry, recommended application circuitry and specifications at any time without
prior notice.
RoHS status based on EUDirective2002/95/EC (at time of this document revi-
sion).



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