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Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
NC
RF IN
RF IN
NC
PDETECT
RF OUT
RF OUT
RF OUT/
VC3
1
4
12
11
10
9
5
6
7
8
16
15
14
13
2
3
Match
Match
Match
Bias
RF5152
3V TO 3.6V, 2.4GHz TO 2.5GHz
LINEAR POWER AMPLIFIER
The RF5152 is a linear, medium-power, high-efficiency, three-stage amplifier IC
designed specifically for battery-powered WLAN applications such as PC cards, mini
PCI, and compact flash applications. The device is manufactured on an advanced
InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final RF amplifier in 2.5GHz OFDM and other spread-
spectrum transmitters. The device is provided in a 3mmx3mm, 16-pin, QFN with a
backside ground. The RF5152 is designed to maintain linearity over a wide range of
supply voltages and power outputs.
Features
Single Power Supply 3.0V to
3.6V
34dB Typical Small Signal Gain
50
Ω Input and Interstage Match-
ing
2400MHz to 2500MHz Fre-
quency Range
+18dBm, 2.5%EVM (typ.),
130mA@VCC=3.3V
Applications
IEEE802.11b/g/n WLAN Applica-
tions
2.5GHz ISM Band Applications
Commercial and Consumer Sys-
tems
Portable Battery-Powered Equip-
ment
Spread-Spectrum and MMDS
Systems
RF5152
3V to 3.6V, 2.4GHz to 2.5GHz Linear Power Amplifier
RF5152PCBA-41X
Fully Assembled Evaluation Board
Rev A10 DS061221
Package Style: QFN, 16-Pin, 3 mm x 3 mm
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