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IRF6216PBF. Datasheet(PDF) 1 Page - International Rectifier |
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IRF6216PBF. Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  www.irf.com 1 02/12/02 IRF6216 SMPS MOSFET HEXFET® Power MOSFET Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -2.2 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V -1.9 A IDM Pulsed Drain Current -19 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 7.8 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Notes through are on page 8 PD - 94297 SO-8 VDSS RDS(on) max ID -150V 0.240 Ω Ω Ω Ω Ω@VGS =-10V -2.2A Symbol Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 RθJA Junction-to-Ambient ––– 50 °C/W Thermal Resistance l Reset Switch for Active Clamp Reset DC-DC converters Benefits Applications l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current Top View 8 1 2 3 4 5 6 7 D D D G S A D S S |
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