Parameter

Max.

Units

Drain- Source Voltage

-12

V

±16

±12

A

Pulsed Drain Current



±100

Power Dissipation

2.5

Power Dissipation

1.6

Linear Derating Factor

0.02

W/°C

Gate-to-Source Voltage

± 12

V

Gate-to-Source Voltage Single Pulse tp<10µs

16

V

Junction and Storage Temperature Range

-55 to + 150

°C

10/19/04

IRF7210

Parameter

Max.

Units

Maximum Junction-to-Ambient

ƒ

50

°C/W

Thermal Resistance

These P-Channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve the

extremely low on-resistance per silicon area. This benefit

provides the designer with an extremely efficient device for

use in battery and load management applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of power

applications. With these improvements, multiple devices

can be used in an application with dramatically reduced

board space. The package is designed for vapor phase,

infra red, or wave soldering techniques.

Description

Absolute Maximum Ratings

W

www.irf.com

1

Top View

8

1

2

3

4

5

6

7

D

D

D

G

S

A

D

S

S

SO-8

PD- 91844B