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TDA8012AM Datasheet(PDF) 7 Page - NXP Semiconductors

Part # TDA8012AM
Description  Low power PLL FM demodulator for satellite TV receivers
PDF  16 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TDA8012AM Datasheet(HTML) 7 Page - NXP Semiconductors

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1997 May 26
7
Philips Semiconductors
Product specification
Low power PLL FM demodulator for
satellite TV receivers
TDA8012AM
Notes
1. The DC supply current is measured with VCC =5V.
2. The VCO frequency drift is defined as the change in oscillator frequency for a variation of ambient temperature, on
the one hand from Tamb =25 °CtoTamb =0 °C and on the other hand from Tamb =25 °CtoTamb =50 °C. It is
measured in the application of Fig.4 with the following component values for the tank circuit:
Coil: 2.5 turns; diameter 2 mm; adjustable.
Capacitor: miniature ceramic plate capacitor NP0, 3.3 pF.
3. The circuit is designed for an input level of 57 dB
µV. The maximum allowable input level for the PLL design is
61 dB
µV. However, for levels different from 57 dBµV, the optimum loop filter values will be different from those given
for the 57 dB
µV input level in the reference measuring set-up.
4. The input impedance is reduced to a resistor with a parallel reactance. The values are given at 480 MHz. In order to
reduce the radiation from the oscillator to the RF input, it is recommended to use a symmetrical drive.
5. The PLL loop gain shift and drift are given without loop filter shift and drift (non-temperature compensated external
components).
Automatic gain control (note 12)
THAGC
automatic gain control threshold as a
function of the voltage applied to pin 10
IAGCO = 0.5 mA;
V10 = 0.1VCC
−−
53
dB
µV
IAGCO = 0.5 mA;
V10 = 0.9VCC
61
−−
dB
µV
note 13
Vth(AGC) (pin 10) not
connected
−
57
−
dB
µV
LD
level detector
shift
VCC = 4.75 to 5.25 V
−
1
−
dB
drift
Tamb = −10 to +80 °C
−
1
−
dB
SAGC
automatic gain control steepness
IAGCO = 0.5 mA; note 14
−
8
−
mA/dB
Vsat(AGC)
low level automatic gain control output
saturation voltage
IAGCO =1mA
−
200
500
mV
Keying pulse
tkey
input keyed pulse time period
−
64
−µs
tW(key)
keyed pulse width
8
−−µs
VIL
LOW level input keyed pulse voltage
key on
−−
0.8
V
VIH
HIGH level input keyed pulse voltage
key off
3.0
−−
V
Zi
input impedance
1
10
−
k
Ω
AFC and carrier detector output (note 15)
IL(pd)
peak detector leakage current
note 16
50
150
250
nA
automatic frequency control steepness
with unmodulated input signal
4.5
5.5
6.5
V/MHz
∆f
AFC(shift)
shift of automatic frequency control
voltage with respect to fVCO with
unmodulated 480 MHz input signal
∆VCC = ±5%
−±180
±500
kHz
∆fAFC(drift)
drift of automatic frequency control
voltage with respect to fVCO
Tamb =80 °C; note 17
−−1.1
−
MHz
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
∆V
AFC
∆f
-----------------



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