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CDCE949PW Datasheet(PDF) 15 Page - Texas Instruments |
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CDCE949PW Datasheet(HTML) 15 Page - Texas Instruments |
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15 / 31 page ![]() Xin Xout Vctr VCXO XO 20pF 20pF i.e. XCSEL =10pF CDCE949 CDCEL949 SCAS844 – JUNE 2007 Table 9. Generic Configuration Register OFFSET(1) Bit(2) Acronym Default(3) DESCRIPTION 00h 7 E_EL xb Device Identification (read only): ‘1’ is CDCE949 (3.3V), ‘0’ is CDCEL949 (1.8V) 6:4 RID 0h Revision Identification Number (read only) 3:0 VID 1h Vendor Identification Number (read only) 01h 7 – 0b Reserved - always write 0 EEPROM Programming 0 – EEPROM programming is completed 6 EEPIP 0b Status(4): (read only) 1 – EEPROM is in programming mode Permanently Lock EEPROM 0 – EEPROM is not locked 5 EELOCK 0b Data(5): 1 – EEPROM will be permanently locked Device power down (overwrites S0/S1/S2 setting; configuration register settings are unchanged) 4 PWDN 0b 0 – device active (all PLLs and all outputs are enabled) 1 – device power down (all PLLs in power down and all outputs in 3-State) Input clock selection: 00 – X-tal 10 – LVCMOS 3:2 INCLK 00b 01 – VCXO 11 – reserved 1:0 SLAVE_ADR 00b Programmable Address Bits A0 and A1 of the Slave Receiver Address 02h Clock source selection for output Y1: 0 – input clock 7 M1 1b 1 – PLL1 clock Operation mode selection for pin 22/23(6) 6 SPICON 0b 0 – serial programming interface SDA (pin 23) and SCL (pin 22) 1 – control pins S1 (pin 23) and S2 (pin 22) 5:4 Y1_ST1 11b Y1-State0/1 Definition (applies to Y1_ST1 and Y1_ST0) 00 – device power down (all PLLs in power down and all outputs in 3-state) 01 – Y1 disabled to 3-state 3:2 Y1_ST0 01b 10 – Y1 disabled to low 11 – Y1 enabled (normal operation) 1:0 Pdiv1 [9:8] 10-Bit Y1-Output-Divider Pdiv1: 0 – divider reset and stand-by 001h 1-to-1023 – divider value 03h 7:0 Pdiv1 [7:0] 04h 7 Y1_7 0b Y1_x State Selection(7) 6 Y1_6 0b 0 – State0 (predefined by Y1-State0 Definition [Y1_ST0]) 1 – State1 (predefined by Y1-State1 Definition [Y1_ST1]) 5 Y1_5 0b 4 Y1_4 0b 3 Y1_3 0b 2 Y1_2 0b 1 Y1_1 1b 0 Y1_0 0b 05h Crystal load capacitor 00h → 0 pF selection(8): 01h → 1 pF 02h → 2 pF 7:3 XCSEL 0Ah 14h-to-1Fh → 20 pF 2:0 — 0b Reserved - do not write others than 0 (1) Writing data beyond ‘50h’ may adversely affect device function. (2) All data is transferred MSB-first. (3) Unless custom setting is used. (4) During EEPROM programming, no data is allowed to be sent to the device via the SDA/SCL bus until the programming sequence is completed. Data, however, can be read during the programming sequence (Byte Read or Block Read). (5) If this bit is set high in the EEPROM, the actual data in the EEPROM is permanently locked, and no further programming is possible. Data, however can still be written via SDA/SCL bus to the internal register to change device function on the fly. But new data can no longer be saved to the EEPROM. EELOCK is effective only if written into the EEPROM (6) Selection of control-pins is effective only if written into the EEPROM. Once written into the EEPROM, the serial programming pins are no longer available. However, if VDDOUT is forced to GND, the two control-pins, S1 and S2, temporally act as serial programming pins (SDA/SCL), and the two slave receiver address bits are reset to A0 = 0 and A1 = 0. (7) These are the bits of the Control Terminal Register. The user can pre-define up to eight different control settings. These settings can then be selected by the external control pins, S0, S1, and S2. (8) The internal load capacitor (C1, C2) must be used to achieve the best clock performance. External capacitors should be used only to do a fine adjustment of CL by few pF. The value of CL can be programmed with a resolution of 1 pF for a total crystal load range of 0 pF to 20 pF. For CL > 20 pF use additional external capacitors. Also, the device input capacitance must be considered; this adds 1.5 pF (6pF//2pF) to the selected CL. For more information about VCXO configuration and crystal recommendations, see application report SCAA085 15 Submit Documentation Feedback |
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