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R8C2E Datasheet(PDF) 19 Page - Renesas Technology Corp |
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R8C2E Datasheet(HTML) 19 Page - Renesas Technology Corp |
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19 / 41 page  R8C/2E Group, R8C/2F Group 1. Overview Rev.1.00 Dec 14, 2007 Page 3 of 332 REJ09B0349-0100 NOTE: 1. Specify the D version if D version functions are to be used. Table 1.2 Specifications for R8C/2E Group (2) Item Specification Flash Memory • Programming and erasure voltage: VCC = 2.7 to 5.5 V • Programming and erasure endurance: 100 times • Program security: ROM code protect, ID code check • Debug functions: On-chip debug, on-board flash rewrite function Operating Frequency/Supply Voltage f(XIN) = 20 MHz (VCC = 3.0 to 5.5 V), f(XIN) = 10 MHz (VCC = 2.7 to 5.5 V) Current consumption Typ. 10 mA (VCC = 5.0 V, f(XIN) = 20 MHz) Typ. 6 mA (VCC = 3.0 V, f(XIN) = 10 MHz) Typ. 23 µA (VCC = 3.0 V, wait mode (peripheral clock off)) Typ. 0.7 µA (VCC = 3.0 V, stop mode) Operating Ambient Temperature -20 to 85 °C (N version) -40 to 85 °C (D version)(1) Package 32-pin LQFP Package code: PLQP0032GB-A (previous code: 32P6U-A) |
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