R8C2E datasheet(21/41 Pages) RENESAS

21 / 41 page

R8C/2E Group, R8C/2F Group

1. Overview

Rev.1.00

Dec 14, 2007

Page 5 of 332

REJ09B0349-0100

NOTE:

1. Specify the D version if D version functions are to be used.

Table 1.4

Specifications for R8C/2F Group (2)

Item

Specification

Flash Memory

• Programming and erasure voltage: VCC = 2.7 to 5.5 V

• Programming and erasure endurance: 10,000 times (data flash)

1,000 times (program ROM)

• Program security: ROM code protect, ID code check

• Debug functions: On-chip debug, on-board flash rewrite function

Operating Frequency/Supply

Voltage

f(XIN) = 20 MHz (VCC = 3.0 to 5.5 V),

f(XIN) = 10 MHz (VCC = 2.7 to 5.5 V)

Current consumption

Typ. 10 mA (VCC = 5.0 V, f(XIN) = 20 MHz)

Typ. 6 mA (VCC = 3.0 V, f(XIN) = 10 MHz)

Typ. 23

µA (VCC = 3.0 V, wait mode (peripheral clock off))

Typ. 0.7

µA (VCC = 3.0 V, stop mode)

Operating Ambient Temperature -20 to 85

°C (N version)

-40 to 85

°C (D version)(1)

Package

32-pin LQFP

Package code: PLQP0032GB-A (previous code: 32P6U-A)

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