RH1014M datasheet(2/6 Pages) AD

2 / 6 page

RH1014M

Rev. I

For more information www.analog.com

SYMBOL PARAMETER

CONDITIONS

NOTES

TA = 25°C

SUB-

GROUP

–55°C ≤ TA ≤ 125°C

SUB-

GROUP UNITS

MIN

TYP

MAX

MIN

TYP

MAX

VOS

Input Offset Voltage

300

550

2,3

µV

450

750

µV

VCM = 0.1V

750

µV

∆VOS

∆Temp

Average Tempco of

Offset Voltage

2.5

µV/°C

∆VOS

∆Time

Long Term VOS Stability

0.5

µV/Mo

IOS

Input Offset Current

2,3

Input Bias Current

2,3

120

2,3

Input Noise Voltage

0.1Hz to 10Hz

0.55

µVP-P

Input Noise Voltage

Density

fO = 10Hz

nV/√Hz

fO = 1000Hz

nV/√Hz

Input Noise Current

Density

fO = 10Hz

0.07

pA/√Hz

RIN

Input Resistance

Differential

MΩ

Common Mode

GΩ

AVOL

Large-Signal Voltage

Gain

VO = ±10V, RL ≥ 2k

1.2

0.25

5,6

V/µV

VO = ±10V, RL ≥ 600Ω

0.5

V/µV

VO = 5mV to 4V, RL = 500Ω

V/µV

Input Voltage Range

13.5

–15.0

1,2

3.5

1,2

CMRR

Common-Mode

Rejection Ratio

VCM = 13.5V, –15V

VCM = 13V, –14.9V

2,3

PSRR

Power Supply Rejection

Ratio

VS = ±2V to ±18V

100

2,3

Channel Separation

VO = ±10V, RL = 2k

120

VOUT

Output Voltage Swing

RL ≥ 2k

±12.5

±11.5

5,6

Output Low, No Load

Output Low, 600Ω to GND

5,6

Output Low, ISINK = 1mA

350

Output High, No Load

4.0

Output High, 600Ω to GND

3.4

3.1

5,6

Slew Rate

0.2

V/µs

Supply Current

Per Amplifier

0.55

0.70

2,3

0.50

0.65

2,3

(Preirradiation)

TABLE 1: ELECTRICAL CHARACTERISTICS

VS = ±15V, VCM = 0V, unless otherwise noted.

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