RH1014M

3

Rev. I

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SYMBOL PARAMETER

CONDITIONS

NOTES

10KRAD (Si) 20KRAD (Si) 50KRAD (Si) 100KRAD (Si) 200KRAD (Si)

UNITS

MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX

VOS

Input Offset Voltage

450

450

600

750

900

µV

2

600

600

750

900

µV

IOS

Input Offset Current

10

10

15

20

25

nA

2

10

10

15

20

nA

IB

Input Bias Current

60

75

100

175

250

nA

2

80

100

125

200

nA

Input Voltage Range

1

13.5

13.5

13.5

13.5

13.5

V

1

–15.0

–15.0

–15.0

–15.0

–15.0

V

2

3.5

3.5

3.5

3.5

V

2

0

0

0

0

V

CMRR

Common-Mode

Rejection Ratio

VCM = 13V, – 15V

97

97

94

90

86

dB

PSRR

Power Supply

Rejection Ratio

VS = ±10V to ±18V

100

98

94

86

80

dB

AVOL

Large-Signal

Voltage Gain

RL ≥ 10k, VO = ±10V

500

200

100

50

25

V/mV

VOUT

Maximum Output

Voltage Swing

RL ≥ 10k

±12.5

±12.5

±12.5

±12.5

±12.5

V

Output Low, No Load

2

25

30

40

50

mV

Output Low, 600Ω to GND

2

10

10

10

10

mV

Output Low, ISINK = 1mA

2

0.6

0.8

1.0

1.6

V

Output High, No Load

2

4.0

4.0

4.0

4.0

V

Output High, 600Ω to GND

2

3.4

3.2

3.0

2.8

V

SR

Slew Rate

RL ≥ 10k

0.13

0.12

0.11

0.07

0.01

V/µs

IS

Supply Current

Per Amplifier

0.55

0.55

0.55

0.55

0.55

mA

2

0.50

0.50

0.50

0.50

mA

TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation)

VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted.

Note 1: Guaranteed by design, characterization, or correlation to other

tested parameters.

Note 2: Specification applies for VS+ = 5V, VS– = 0V, VCM = 0V,

VOUT = 1.4V.