RH118

2

Rev. E

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TABLE 1: ELECTRICAL CHARACTERISTICS

TABLE 1A: ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER

CONDITIONS

NOTES

TA = 25˚C

SUB-

GROUP

−55˚C ≤ TA ≤ 125˚C

SUB-

GROUP

UNITS

MIN

TYP

MAX

MIN

TYP

MAX

VOS

Input Offset Voltage

4

1

6

2,3

mV

IOS

Input Offset Current

50

1

100

2,3

nA

IB

Input Bias Current

250

1

500

2,3

nA

RIN

Input resistance

4

1

MΩ

AV

Large-Signal

Voltage Gain

VS = ±15V, VOUT = ±10V

RL ≥ 2k

50

1

25

2,3

V/mV

SR

Slew Rate

VS = ±15V, AV = 1

5

50

V/µs

GBW

Gain Bandwidth

Product

VS = ±15V

15

MHz

Output Voltage

Swing

VS = ±15V, RL = 2k

±12

4

±12

5,6

V

Input Voltage

Range

VS = ±20V

±16.5

1

±16.5

2,3

V

IS

Supply Current

8

1

mA

TA = 125˚C

7

2

mA

CMRR

Common Mode

Rejection Ratio

80

1

80

2,3

dB

PSRR

Power Supply

Rejection Ratio

70

1

70

2,3

dB

(Postirradiation) (Note 6)

SYMBOL PARAMETER

CONDITIONS

NOTES

10Krad(Si)

20Krad(Si)

50Krad(Si)

100Krad(Si)

200Krad(Si

UNITS

MIN

MAX

MIN

MAX

MIN

MAX

MIN

MAX

MIN

MAX

VOS

Input Offset Voltage

4

4

4

4

10

mV

IOS

Input Offset Current

50

50

50

50

100

nA

IB

Input Bias Current

250

250

250

300

400

nA

RIN

Input Resistance

4

1

1

1

0.5

0.5

MΩ

AV

Large-Signal Voltage

Gain

VS = ±15V, VOUT = ±10V

RL ≥ 2k

50

50

50

50

25

V/mV

SR

Slew Rate

VS = ±15V, AV = 1

5

50

50

50

50

50

V/µs

GBW

Gain Bandwidth

Product

VS = ±15V

15

(Typ)

15

(Typ)

15

(Typ)

15

(Typ)

15

(Typ)

MHz

Output Voltage Swing VS = ±15V, RL = 2k

±12

±12

±12

±12

±12

V

Input Voltage Range

±16.5

±16.5

±16.5

±15

±12

V

IS

Supply Current

8

8

8

8

8

mA

CMRR

Common Mode

Rejection Ratio

80

80

80

80

70

dB

PSRR

Power Supply

Rejection Ratio

70

70

70

70

60

dB

(Preirradiation) (Note 3)

Device is characterized at the TID levels below. Device is production tested at 100kRad(si).

Device is characterized at the TID levels below. Device is production tested at 100kRad(si).