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2SK4100LS Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # 2SK4100LS
Description  N-Channel Silicon MOSFET General-Purpose Switching Device
PDF  5 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SK4100LS Datasheet(HTML) 2 Page - Sanyo Semicon Device

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2SK4100LS
No. A0778-2/5
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=10mA, VGS=0V
650
V
Zero-Gate Voltage Drain Current
IDSS
VDS=520V, VGS=0V
100
µA
Gate-to-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
±100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
3
5
V
Forward Transfer Admittance
yfs
VDS=10V, ID=3A
2
4
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=3A, VGS=10V
1.05
1.35
Ω
Input Capacitance
Ciss
VDS=30V, f=1MHz
600
pF
Output Capacitance
Coss
VDS=30V, f=1MHz
110
pF
Reverse Transfer Capacitance
Crss
VDS=30V, f=1MHz
24
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
18
ns
Rise Time
tr
See specified Test Circuit.
41
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
78
ns
Fall Time
tf
See specified Test Circuit.
28
ns
Total Gate Charge
Qg
VDS=200V, VGS=10V, ID=6A
23
nC
Gate-to-Source Charge
Qgs
VDS=200V, VGS=10V, ID=6A
4.5
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=200V, VGS=10V, ID=6A
13
nC
Diode Forward Voltage
VSD
IS=6A, VGS=0V
0.9
1.2
V
Package Dimensions
unit : mm (typ)
7509-002
Switching Time Test Circuit
Avalanche Resistance Test Circuit
0.7
2.55
2.55
1.2
0.9
0.75
1.2
4.5
2.8
12 3
10.0
3.2
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
PW=10µs
D.C.≤0.5%
P.G
RGS=50Ω
G
S
D
ID=3A
RL=66.7Ω
VDD=200V
VOUT
2SK4100LS
VIN
10V
0V
VIN
50Ω
≥50Ω
RG
VDD
L
10V
0V
2SK4100LS



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