P4C165 datasheet(5/9 Pages) PYRAMID

Part #	P4C165

Description	ULTRA HIGH SPEED 8K x 8 RESETTABLE STATIC CMOS RAM

PDF	9 Pages

Scroll/Zoom	100%

Manufacturer	PYRAMID [Pyramid Semiconductor Corporation]

Direct Link	http://www.pyramidsemiconductor.com

Logo

5 / 9 page

P4C165

Page 5 of 9

Document # SRAM117 Rev OR

Notes:

11. CE

1 and WE must be LOW, and CE2 HIGH for WRITE cycle.

12. OE is LOW for this WRITE cycle to show t

WZ and tOW.

13. If CE

1 goes HIGH, or CE2 goes LOW, simultaneously with WE HIGH,

the output remains in a high impedance state.

-20

AC CHARACTERISTICS—WRITE CYCLE

CC = 5V ± 10%, All Temperature Ranges)

(2)

14. Write Cycle Time is measured from the last valid address to the first

transitioning address.

Sym.

Parameter

Write Cycle Time

Chip Enable Time to End of Write

Address Set-up Time

Write Pulse Width

Address Hold Time

Date Hold Time

Data Valid to End of Write

Max

Min

Max

Min

Max

Min

Max

Min

-15

-25

-35

Unit

Address Valid to End of Write

Write Enable to Output in High Z

Output Active from End of Write

3333

WRITE CYCLE NO. 1 (WE

WE CONTROLLED)(11)

P4C165 Datasheet(PDF) 5 Page - Pyramid Semiconductor Corporation

P4C165 Datasheet(HTML) 5 Page - Pyramid Semiconductor Corporation

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL