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TPB65R075DFD Datasheet(PDF) 2 Page - Wuxi Unigroup Microelectronics Company |
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TPB65R075DFD Datasheet(HTML) 2 Page - Wuxi Unigroup Microelectronics Company |
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2 / 10 page  TPB65R075DFD,TPP65R075DFD,TPW65R075DFD Wuxi Unigroup Microelectronics Co.,Ltd V1.0 www.tsinghuaicwx.com 2 Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Values Unit Continuous Drain Current TC = 25ºC ID 45 A TC = 100ºC 27 Pulsed Drain Current (note1) ID,pulse 135 A Gate-Source Voltage VGSS ± 30V V Single Pulse Avalanche Energy (note2) EAS 180 mJ Repetitive Avalanche Energy (note2) EAR 144 mJ Avalanche Current IAR 6 A MOSFET dv/dt Ruggedness, VDS = 0...650V dv/dt 50 V/ns Power Dissipation For TO-263,TO-220,TO-247 PD 312 W Continuous Diode Forward Current IS 45 A Diode Pulsed Current (note1) IS,pulse 135 Reverse Diode dv/dt (note3) dv/dt 50 V/ns Operating Junction and Storage Temperature Range TJ, Tstg -55~+150 ºC Thermal Resistance For TO-263,TO-220,TO-247 Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case RthJC 0.4 ºC/W Thermal Resistance, Junction-to-Ambient RthJA 62 |
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