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VEC2813 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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VEC2813 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 6 page ![]() VEC2813 No. A0384-2/6 Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 20 V Zero-Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 µA Gate-to-Source Leakage Current IGSS VGSS=±8V, VDS=0V ±10 µA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V Forward Transfer Admittance yfs VDS=10V, ID=1.4A 3.4 5.6 S RDS(on)1 ID=1.5A, VGS=4V 51 66 m Ω Static Drain-to-Source On-State Resistance RDS(on)2 ID=0.7A, VGS=2.5V 61 85 m Ω RDS(on)3 ID=0.3A, VGS=1.8V 75 113 m Ω Input Capacitance Ciss VDS=10V, f=1MHz 280 pF Output Capacitance Coss VDS=10V, f=1MHz 60 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 38 pF Turn-ON Delay Time td(on) See specified Test Circuit. 13 ns Rise Time tr See specified Test Circuit. 35 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 35 ns Fall Time tf See specified Test Circuit. 25 ns Total Gate Charge Qg VDS=10V, VGS=4V, ID=3A 8.8 nC Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=3A 0.85 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=3A 0.85 nC Diode Forward Voltage VSD IS=3A, VGS=0V 0.82 1.2 V [SBD] Reverse Voltage VR IR=2mA 30 V Forward Voltage VF IF=2A 0.4 0.45 V Reverse Current IR VR=15V 1.25 mA Interterminal Capacitance C VR=10V, f=1MHz 75 pF Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 20 ns Package Dimensions Electrical Connection unit : mm (typ) 7012-004 2.9 0.65 0.3 123 4 87 6 5 0.15 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode SANYO : VEC8 87 6 5 123 4 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode Top view |
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