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TIPL770 Datasheet(PDF) 2 Page - Power Innovations Ltd

Part # TIPL770
Description  NPN SILICON POWER TRANSISTOR
PDF  7 Pages
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Manufacturer  POINN [Power Innovations Ltd]
Direct Link  http://www.bourns.com
Logo POINN - Power Innovations Ltd

TIPL770 Datasheet(HTML) 2 Page - Power Innovations Ltd

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TIPL770
NPN SILICON POWER TRANSISTOR
2
MARCH 1984 - REVISED MARCH 1997
PRODUCT
INFORMATION
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VCEO(sus)
Collector-emitter
sustaining voltage
IC = 100 mA
L = 25 mH
(see Note 2)
400
V
ICES
Collector-emitter
cut-off current
VCE = 850 V
VCE = 850 V
VBE = 0
VBE = 0
TC = 100°C
5
200
µA
ICEO
Collector cut-off
current
VCE = 400 V
IB = 0
5
µA
IEBO
Emitter cut-off
current
VEB =
10 V
IC = 0
1
mA
hFE
Forward current
transfer ratio
VCE =
5 V
IC = 0.5 A
(see Notes 3 and 4)
20
60
VCE(sat)
Collector-emitter
saturation voltage
IB =
0.2 A
IB =
0.5 A
IB =
0.5 A
IC =
1 A
IC = 2.5 A
IC = 2.5 A
(see Notes 3 and 4)
TC = 100°C
1.0
2.5
5.0
V
VBE(sat)
Base-emitter
saturation voltage
IB =
0.2 A
IB =
0.5 A
IB =
0.5 A
IC =
1 A
IC = 2.5 A
IC = 2.5 A
(see Notes 3 and 4)
TC = 100°C
1.0
1.2
1.3
V
ft
Current gain
bandwidth product
VCE =
10 V
IC = 0.5 A
f =
1 MHz
12
MHz
Cob
Output capacitance
VCB =
20 V
IE = 0
f = 0.1 MHz
55
pF
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
2.5
°C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS †
MIN
TYP
MAX
UNIT
tsv
Voltage storage time
IC = 2.5 A
VBE(off) = -5 V
IB(on) = 0.5 A
(see Figures 1 and 2)
2
µs
trv
Voltage rise time
200
ns
tfi
Current fall time
200
ns
tti
Current tail time
50
ns
txo
Cross over time
300
ns
tsv
Voltage storage time
IC = 2.5 A
VBE(off) = -5 V
IB(on) = 0.5 A
TC = 100°C
(see Figures 1 and 2)
2.5
µs
trv
Voltage rise time
400
ns
tfi
Current fall time
250
ns
tti
Current tail time
50
ns
txo
Cross over time
500
ns



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