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TS8314 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

Part # TS8314
Description  Bi-directional N-Channel 2.5V Specified MicroSURF?
PDF  28 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TS8314 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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Electrical Characteristics
PRELIMINARY DATA SHEET
TA=25°C unless otherwise specified
Symbol
Parameter
Test Condition
Min
Typ
Max
Units
V(BD)S1S2S
Source-to-Source Breakdown Voltage
VGS=0V, IS=250µA
20
V
IS1S2S
Zero Gate Voltage Source Current
VS1S2=20V, VGS=0V, T=150°C
50
µA
IGSS
Gate-Body Leakage
VGS=7V, VS1S2=0V
100
nA
IGSS
Gate-Body Leakage
VGS=12V, VS1S2=0V
10
mA
VGS(th)
Gate Threshold Voltage
VS1S2=VGS, IS=250µA
0.8
1.2
V
Source-to-Source On-State Resistance
VGS=4.5V, IS=6.5A
2630mΩ
Source-to-Source On-State Resistance
VGS=2.5V, IS=5.5A
3844mΩ
Source-to-Source On-State Resistance
VGS=4.5V, IS=6.5A
1315mΩ
Drain-to-Source On-State Resistance
VGS=2.5V, IS=5.5A
1922mΩ
Ciss
Input Capacitance
VS1S2=20V, VG=0V, F=1MHZ
1100
pF
Coss
Output Capacitance
VS1S2=20V, VG=0V, F=1MHZ
400
pF
Crss
Reverse Transfer Capacitance
VS1S2=20V, VG=0V, F=1MHZ
300
pF
Qg
Total Gate Charge
VGS=5V, IS=8A, VS1S2=10V
15
nC
trr
Source-Drain Reverse Recovery Time
IS=1A, VGS=0V, di/dt=100A/µs
40
ns
VSS
Diode Forward Voltage
IS=1A, VGS=0V
0.71
V
Electrical Characteristics
rS1S2(on)
rDS1(on)
equiva le nt
2
8/15/03 Rev3



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