Current consumption is reduced with use of the burst mode, promoting standby compatibility

with a single converter.

The optimized switching device provides ideal partial resonance operation for high efficiency

and low noise.

The 900V resistant switching device (high-speed IGBT) simplifies design of power supplies

for worldwide input.

Power consumption under micro-load is extremely low (burst mode).

Use of a drain kick circuit eliminates the need for a start-up resistor.

The use of a soft drive circuit reduces noise.

Incorporates an over-current protection function (primary current detect, Ton limit).

Incorporates over-voltage protection and thermal shutdown functions.

A power supply circuit may be configured with the minimum of external components.

The use of the fully molded package is beneficial for insulation design.

1

2

3

4

5

6

7

8

9

10

P.02

All Rights Reserved Copyright (C) SHINDENGEN ELECTRIC MANUFACTURING CO., LTD. 2002

2-1

Primary Features

2-2

Product Lineup

Table 1 MR2000 Series Product Lineup

MR2520

MR2540

MR2920

MR2940

High-speed

IGBT

MOSFET

500

900

8

13

7

10

150

100

100

150

225

150

-

-

-

-

-

-

Model

Main switch

Peak

input

voltage

Peak

input

current

Input

voltage

range

Input

voltage

range

Input

voltage

range

Output capacity Po [W] (reference values)

AC90~132V

AC90~276V AC180~276V