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Password Vol.02-06-e MR2000 Series

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Advantages of 900V Resistance in the High-speed IGBT (MR2900 Series)

Fig.5 Comparison between Waveforms with 650V and 900V Resistance

Fig.4 Comparison of Losses in 900V Resistant Switching Device

High-speed IGBT

Bipolar transistor

MOSFET

Voltage [V]

Current [A]

900V design

650V design

Small switching loss

Small switching loss

AC input voltage Vin [V]

100V

200V

300V

The MR2900 Series incorporates a 900V resistant high-speed IGBT for almost ideal partial

resonance operation.

Fig.5 shows a comparison between waveforms with 650V and 900V resistance. The use of the

900V resistant device allows a sufficiently small resonance condenser discharge current, with

consequently reduced switching losses. This in turn allows an increase in the capacity of the

resonance condenser C1, thus allowing lower noise and a power supply of higher efficiency.

The ability to maintain a sufficient margin of voltages resistance eliminates the need for a DCR

snubber circuit, thus reducing the number of components required and allowing design of power

supplies with superior cost-performance.

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