FM3316 datasheet(21/28 Pages) RAMTRON

21 / 28 page

FM33256/FM3316 SPI Companion w/ FRAM

Rev. 1.0

Dec. 2006

Page 21 of 28

Figure 18. Processor Companion Write

Status Register & Write Protection

The write protection features of the FM33xx are

multi-tiered. To write the memory, a WREN op-code

must first be issued, followed by a WRITE op-code.

A Status Register associated with the memory has a

write enable latch bit (WEL) that is internally set

when WREN is issued.

Writes to certain memory blocks are controlled by

the Block Protect bits in the Status Register. The BP

bits may be changed by using the WRSR command.

The Status Register is organized as follows.

Table 5. Status Register

Bit

Name

BP1

BP0

WEL

Bits 7, 5, 4, and 0 are fixed at 0, bit 6 is fixed at 1,

and none of these bits can be modified. Note that bit

0 (Ready in EEPROMs) is unnecessary as the FRAM

writes in real-time and is never busy. The BP1 and

BP0 control software write-protection features. They

are nonvolatile (shaded yellow). The WEL flag

indicates the state of the Write Enable Latch.

Attempting to directly write the WEL bit in the Status

internally set and cleared via the WREN and WRDI

commands, respectively. BP1 and BP0 are memory

block write protection bits. They specify portions of

memory that are write-protected as shown in the

following table.

Table 6. Block Memory Write Protection

BP1

BP0

Protected Address Range

None

Upper ¼

Upper ½

All

The BP1 and BP0 bits and the Write Enable Latch

are the only mechanisms that protect the memory

from writes.

Memory Operation

The SPI interface, which is capable of a relatively

high clock frequency, highlights the fast write

capability of the FRAM technology. Unlike SPI-bus

EEPROMs, the FM33xx can perform sequential

writes at bus speed. No page register is needed and

any number of sequential writes may be performed.

Write Operation

All writes to the memory begin with a WREN op-

code with /CS being asserted and deasserted. The

next op-code is a WRITE. The WRITE op-code is

followed by a two-byte address value. Table 7 shows

the addressing scheme for each density. This is the

starting address of the first data byte of the write

operation. Subsequent bytes are data bytes, which are

written sequentially. Addresses are incremented

internally as long as the bus master continues to issue

clocks and keeps /CS low. A write operation will be

terminated when a write-protected address is directly

accessed

when

the

device

has

internally

incremented the address into a write-protected space.

If the last address is reached (e.g. 7FFFh on the

FM33256), the counter will roll over to 0000h. Data

is written MSB first. The rising edge of /CS

terminates a WRITE operation. A write operation is

shown in Figure 19. Note: Although the WREN op-

code is not shown in the timing diagram, it is

required prior to sending the WRITE command.

EEPROMs use page buffers to increase their write

throughput. This compensates for the technology’s

inherently slow write operations. FRAM memories

do not have page buffers because each byte is written

to the FRAM array immediately after it is clocked in

(after the 8

th clock). This allows any number of bytes

to be written without page buffer delays.

Read Operation

After the falling edge of /CS, the bus master can issue

a READ op-code. Following the READ command is

a two-byte address value. Table 7 shows the

addressing scheme for each density. This is the

starting address of the first byte of the read operation.

op-code

MSB

SCK

LSB MSB

LSB

Data

Hi-Z

LSB

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