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LM3101M Datasheet(PDF) 15 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # LM3101M
Description  Secondary-Side PWM Controller
PDF  20 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM3101M Datasheet(HTML) 15 Page - National Semiconductor (TI)

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Typical Applications (Continued)
TLH11436 – 16
Output Voltage 1Vdiv
Horizontal Time Base 500 msdiv
FIGURE 10 Output Voltage Start-up
At the end of the start-up sequence the circuit is in steady-
state or normal PWM operation
Design Procedure
For the Offline Voltage Mode Flyback Regulator (
Figure 7 )
the specifications for the power transformer
MOSFET
switch the switch snubber and the output rectifier can be
calculated based on the system specifications
System specifications
VO e 5 VDC
VI Range e 90 VAC–132 VAC
IO Range e 05A–10A
Efficiency (h)
80%
FO e 500 kHz
TRANSFORMER SPECIFICATIONS
Manipulating the transfer function of a flyback regulator re-
sults in a calculation for the turns ratio of the power trans-
former involving the minimum input voltage the output volt-
age and the maximum duty cycle (D)
VO a VF e (VIN(MIN)–VSW(ON))  (NS NP) 
(D(MAX) (1–D(MAX)))
v
NS NP e (VO a VF)(VIN(MIN)–VSW(ON)) 
((1–D(MAX))D(MAX))
Assume that the diode forward voltage (VF) is about 07V
and the drain-to-source voltage when the switch is on
(VSW(ON)) is approximately 09V Selecting a 28% maximum
duty cycle results in a turns ratio of
NS NP e (57V1261V)  (1–028)028 e 012
(NP NS e 851)
Assuming an efficiency (h) of 80% the average input cur-
rent (at the maximum load current and for the entire period)
is
IIN e (VO)(IO) (VIN(MIN)  h) e (50W)(127V  080)
e
049A
The average current when the switch is on is the average
current over the entire period divided by the duty cycle
IIN(TON) e IIN D e (049A)(028) e 177A
Selecting the primary inductance ripple current (DIP)tobea
certain percentage of IIN(TON) and combining that with the
duty cycle input voltage and operating frequency gives the
primary inductance by the equation
LP e (VIN(MIN)–VSW(ON))  D(MAX) (DIP  FO)
Assuming the percentage to be 46% in the example then
LP e 1261V  028(081A  500 kHz) j 87 mH
MOSFET PARAMETERS
The peak current through the primary inductance and the
Power MOSFET is the average current when the switch is
on plus one-half the primary inductance ripple current
IPRI(PK) e IIN(TON) a (DIP 2) e 177A a (081A2)
e
218A
Assuming ideal conditions the maximum voltage at the
drain of the Power MOSFET when the switch is off is
VSW(OFF) e (VO a VF)(NP NS) a VIN(MAX)
e
(57V) (85) a 185V e 233V
x 250V
However leakage inductance exists in the transformer
causing a voltage spike immediately after the switch turns
off This voltage spike will add to the rest of the drain volt-
ages making VSW(OFF) even greater With a leakage induc-
tance that is 2% of the transformer primary inductance and
selecting a switch which has a fall time of 2% the total off-
time the added voltage will be
VLL e 2%  LP  IPRI(PK)  FO 2%  (1–D(MAX))
The maximum duty cycle of 28% is used for worst case
purposes Thus the leakage inductance voltage spike is
VLL e 002  87 mH  218A  500 kHz 002  (1–028)
e
130V
x 150V
This means the actual peak drain voltage is approximately
400V When choosing the Power MOSFET add some mar-
gin to this number A 500V MOSFET was used in this appli-
cation
SNUBBER DESIGN
A ‘‘snubber’’ circuit consisting of a 1N4937 fast recovery
diode and a parallel RC network is inserted around the
transformer primary to clamp the voltage spike This is to
reduce the switch voltage stress when it is off The ‘‘snub-
ber’’ components are calculated in the following manner
CSN t 002  LP  IP(PK)2 (VMAX2 b VSN2)
e
002
 87 mH  (218A)2 (255V)2 b (250V)2
33 nF
and
RSN s (VMAX a VSN b VIN)2 2 
100(FO  LP  IP(PK)2)
e
(255V a 250V b185V)2 2
 100(500 kHz  87 mH
 (218A)2)
12 kX
In the Offline Flyback Regulator application a 001 mF ca-
pacitor and a 10 kX resistor are used as the snubber com-
ponents VMAX is the selected maximum voltage at the drain
of the MOSFET Usually the RC values are selected so that
VMAX is 5V to 10V higher than VSN The power dissipation
of the resistor is
P e (VMAX a VSN b VIN)2 2 R e
(255V a 250V b 185V)2 2 10 kX e 256W
To add some margin a 4W resistor is chosen
The fast recovery diode must have a reverse voltage rating
greater than VMAX The 1N4937 has a 600V rating
OUTPUT DIODE PARAMETERS
The peak secondary current can be calculated using the
peak primary current and the turns ratio (this equation is for
single output flyback regulators)
ISEC(PK) e IPRI(PK)  (NP NS) e 218A 
85 e 1843A
x 20A
15



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