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INA821 Datasheet(PDF) 12 Page - Texas Instruments |
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INA821 Datasheet(HTML) 12 Page - Texas Instruments |
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12 / 40 page ![]() 6.6 Typical Characteristics (continued) at TA = 25°C, VS = VSOUT = ±15V, VICM = VREF = 0V, RL = 10kΩ connected to ground, and G =1V/V (unless otherwise noted) Typical unit shown G = 1V/V Figure 6-25. Input Bias Current vs VICM Input Offset Current (nA) 0 5 10 15 20 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 N = 1767 Mean = –0.006nA Std. dev = 0.139nA G = 1V/V Figure 6-26. Distribution of Input Offset Current N = 58 1 wafer lot G = 1V/V Figure 6-27. Input Offset Current vs Temperature Frequency (Hz) 5 10 20 30 50 100 200 300 500 1000 2000 100m 1 10 100 1k 10k 100k G = 0.125 G = 0.25 G = 0.5 G = 1 G = 2 G = 4 G = 8 G = 16 Typical unit shown . Figure 6-28. Voltage Noise Spectral Density (RTI) vs Frequency Time (1s/div) Typical unit shown G = 0.125V/V Figure 6-29. 0.1Hz to 10Hz Voltage Noise (RTI) Time (1s/div) Typical unit shown G = 1V/V Figure 6-30. 0.1Hz to 10Hz Voltage Noise (RTI) PGA849 SBOSAG3A – MARCH 2024 – REVISED DECEMBER 2024 www.ti.com 12 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated Product Folder Links: PGA849 |
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