DS3501UT datasheet(4/14 Pages) MAXIM

4 / 14 page

High-Voltage, NV, I2C POT with Temp Sensor

and Lookup Table

_____________________________________________________________________

NONVOLATILE MEMORY CHARACTERISTICS

(VCC = +2.7V to +5.5V)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

TA = +70°C

50,000

EEPROM Write Cycles

TA = +25°C

200,000

Writes

Note 1: All voltages are referenced to ground. Currents entering the IC are specified positive and currents exiting the IC are nega-

tive.

Note 2: ICC is specified with the following conditions: SCL = 400kHz; SDA pulled up; and RL, RW, RH floating.

Note 3: ICC is specified with the following conditions: SCL, SDA pulled up; RL, RW, RH floating; and temperature sensor on.

Note 4: ISTBY is specified with SDA = SCL = VCC = 5.5V, resistor pins floating, and CR2 bit 0 = logic-high.

Note 5: This is the minimum VCC voltage that causes NV memory to be recalled.

Note 6: This is the time from VCC > VPOR until initial memory recall is complete.

Note 7: Guaranteed by design.

Note 8: Integral nonlinearity is the deviation of a measured resistor setting value from the expected values at each particular resis-

tor setting. Expected value is calculated by connecting a straight line from the measured minimum setting to the measured

maximum setting. INL = [V(RW)i - (V(RW)0] / LSB(ideal) - i, for i = 0...127.

Note 9: Differential nonlinearity is the deviation of the step-size change between two LSB settings from the expected step size. The

expected LSB step size is the slope of the straight line from measured minimum position to measured maximum position.

DNL = [V(RW)i+1 - (V(RW)i] / LSB(ideal) - 1, for i = 0...126.

Note 10: ZS error = code 0 wiper voltage divided by one LSB(ideal).

Note 11: FS error = (code 127 wiper voltage - V+) divided by one LSB (ideal).

Note 12: I2C interface timing shown is for fast-mode (400kHz) operation. This device is also backward-compatible with I2C standard

mode timing.

Note 13: CB—total capacitance of one bus line in picofarads.

Note 14: EEPROM write time begins after a STOP condition occurs.

Note 15: Pulses narrower than max are suppressed.

I2C AC ELECTRICAL CHARACTERISTICS (continued)

(VCC = +2.7V to +5.5V, TA = -40°C to +100°C, timing referenced to VIL(MAX) and VIH(MIN). See Figure 3.)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

Data Hold Time

tHD:DAT

0.9

µs

Data Setup Time

tSU:DAT

100

START Setup Time

tSU:STA

0.6

µs

SDA and SCL Rise Time

(Note 13)

20 +

0.1CB

300

SDA and SCL Fall Time

(Note 13)

20 +

0.1CB

300

STOP Setup Time

tSU:STO

0.6

µs

SDA and SCL Capacitive

(Note 13)

400

EEPROM Write Time

(Note 14)

Pulse-Width Suppression Time at

SDA and SCL Inputs

tIN

(Note 15)

A0, A1 Setup Time

tSU:A

Before START

0.6

µs

A0, A1 Hold Time

tHD:A

After STOP

0.6

µs

SDA and SCL Input Buffer

Hysteresis

0.05 x

VCC

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