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CPC1580 Datasheet(PDF) 7 Page - Clare, Inc. |
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CPC1580 Datasheet(HTML) 7 Page - Clare, Inc. |
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7 / 11 page ![]() CPC1580 R00G www.clare.com 7 3.2 Transistor Selection The CPC1580 charges and discharges an external MOSFET transistor. The selection of the MOSFET is determined by the user to meet the specific power requirements for the load. The CPC1580 output voltage is listed in the specifications, but as mentioned earlier, there must be little or no gate leakage. Another parameter that plays a significant role in the selection of the transistor is the gate drive voltage available from the part. The CPC1580 uses photovoltaic cells to collect the optical energy generated by the LED; to generate more voltage, the photovoltaic diodes are stacked. The voltage change of the photovoltaic stack reduces with increased temperature. The user must select a transistor that will maintain the load current at the maximum temperature, given the VGS in Section 1.6, the CPC1580 Table of Electrical Specifications. The example circuits shown in Figure 1 and Figure 2 use “logic level” MOSFETs for each design to maintain the load described. 3.2.1 Transistor Switching Characteristics The primary characteristics of the application switching are tON, tOFF, tRISE, tFALL, and the recovery time of the storage capacitor, tCHG. These parameters are dependent on the MOSFET selection and need to be reviewed in light of the application requirements. The CPC1580 turns on the MOSFET transistor to the specified VGS after the tON delay. Similarly the tOFF delay is the amount of time until the LED is turned off and the capacitive load discharges to the level in the CPC1580 specification. For MOSFETs with larger or smaller required gate charge the tON and tOFF will be proportionately faster and slower, but it is not a linear relationship. To calculate the nominal rise time of the transistor's drain voltage, VD: To calculate the nominal fall time of the transistor's drain voltage, VD: Where CRSS is the MOSFET gate-drain capacitance (averaged over the switching voltage range) found in the MOSFET data sheet, IG_SINK is the gate sinking current of the CPC1580, and IG_SOURCE is the gate driving ability. The maximum value of tRISE is limited by the CPC1580 unloaded discharge characteristic and should be reviewed in light of the final application component selections if critical. The value for the charge time, TCHG, is due to external component selection. The storage capacitor charge recovery time (seconds) is computed as: Which reduces to: ROVP and COVP are optional over-voltage protection elements that are present in the application circuit diagram (see Figure 2). The term inside the logarithm reflects the discharge and recharge voltage on CST. For practical circuit component selection, this can be simplified as described above. Use this information to calculate the maximum switching frequency in Section 6 below. Note: The CPC1580 is ideal to use where remote power is otherwise unavailable. If the LED is also powered remotely, care must be taken to ensure that parasitic transient signals are reliably filtered from the input control signal. Large transient currents will mutually couple energy between cables and a simple R-C filtering of the CPC1580 input may be sufficient to suppress false turn-on. tRISE,VD ~ ~ VLOAD • CRSS IG_SINK (SECONDS) tFALL,VD ~ ~ VLOAD • CRSS IG_SOURCE (SECONDS) tCHG ~ ~ - (400 + ROVP) • (CST + COVP) • ln (VLOAD - VFINAL) • CST QGATE ) ( tCHG ~ ~ - (400 + ROVP) • (CST + COVP) • 3 |
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