TC9WMB1AFK/FU,TC9WMB2AFK/FU

2007-10-19

11

Characteristics

Symbol

Rating

Unit

Supply voltage

−0.3 to 7.0

V

Input voltage

V

Output voltage

V

300 (25°C,SM8)

Power dissipation

200 (25°C,US8)

mW

Storage temperature

−55 to 125

°C

Operating temperature

−40 to 85

°C

Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even

destruction.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Max

Unit

Supply voltage (for reading)

⎯

1.8

3.6

V

Supply voltage (for writing)

⎯

2.3

3.6

V

2.3 V

0.7

×

High-level input voltage

1.8 V

0.8

×

V

2.3 V

0

0.3

×

Low-level input voltage

1.8 V

0

0.2

×

V

2.3 V

0

400

Operating frequency

1.8 V

0

100

kHz

Note: The operating ranges must be maintained to ensure the normal operation of the device.