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TC9WMB2AFK Datasheet(PDF) 12 Page - Toshiba Semiconductor

Part # TC9WMB2AFK
Description  CMOS Digital Integrated Circuits Silicon Monolithic
PDF  18 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC9WMB2AFK Datasheet(HTML) 12 Page - Toshiba Semiconductor

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TC9WMB1AFK/FU,TC9WMB2AFK/FU
2007-10-19
12
Electrical Characteristics
DC Characteristics (GND = 0 V, Topr = −40 to 85°C)
1.8
≤ VCC < 2.3 V 2.3 ≤ VCC ≤ 3.6 V
Characteristics
Symbol
Test
Condition
Min
Max
Min
Max
Unit
Input current
ILI
⎯
⎯
±1
⎯
±1
μA
Output leakage current
ILO
⎯
⎯
±1
⎯
±1
μA
IOL = 3.2 mA
⎯
⎯
⎯
0.4
Low-level output voltage
VOL
IOL = 1.5 mA
⎯
0.5
⎯
⎯
V
Quiescent supply current
ICC1
⎯
⎯
5
⎯
5
μA
Supply current during read
ICC2
f
= 400 kHz
⎯
0.2*
⎯
0.3
mA
Supply current during write
ICC3
f
= 400 kHz
⎯
⎯
⎯
1.5
mA
*: f
= 100 kHz
AC Characteristics (GND = 0 V, Topr = −40 to 85°C)
Test Conditions
Input rise/fall time
20 ns
Input/output testing voltage
0.5
× VCC
Output load
100 pF
+ 1 kΩ pull-up resistor
1.8
≤ VCC < 2.3 V 2.3 ≤ VCC ≤ 3.6 V
Characteristics
Symbol
Min
Max
Min
Max
Unit
SCL clock frequency
fSCL
0
100
0
400
kHz
SCL clock low time
tLOW
4.7
⎯
1.2
⎯
μs
SCL clock high time
tHIGH
4.0
⎯
0.8
⎯
μs
Noise suppression time
tI
⎯
100
⎯
50
ns
SDA output delay
tAA
0.1
4.5
0.1
0.9
μs
Bus free time
tBUF
4.7
⎯
1.2
⎯
μs
Start condition hold time
tHD.STA
4.0
⎯
0.6
⎯
μs
Start condition setup time
tSU.STA
4.7
⎯
0.6
⎯
μs
Data input hold time
tHD.DAT
0
⎯
0
⎯
ns
Data input setup time
tSU.DAT
300
⎯
200
⎯
ns
SCL, SDA input rise time
tR
⎯
1.0
⎯
0.3
μs
SCL, SDA input fall time
tF
⎯
0.3
⎯
0.3
μs
Stop condition setup time
tSU.STO
4.7
⎯
0.6
⎯
μs
SDA output hold time
tDH
100
⎯
50
⎯
ns
VCC
RL = 1 kΩ
SDA
CL = 100 pF



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