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2SA949 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SA949 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page ![]() 2SA949 2006-11-09 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −150 V, IE = 0 ― ― −0.1 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −0.1 μA DC current gain hFE (Note) VCE = −5 V, IC = −10 mA 70 ― 240 Collector-emitter saturation voltage VCE (sat) IC = −10 mA, IB = −1 mA ― ― −0.8 V Base-emitter voltage VBE VCE = −5 V, IC = −30 mA ― ― −0.9 V Transition frequency fT VCE = −30 V, IC = −10 mA ― 120 ― MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― 4.0 5.0 pF Note: hFE classification O: 70 to 140, Y: 120 to 240 Marking A949 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator Part No. (or abbreviation code) |
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