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2SA949 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SA949 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 4 page  2SA949 2006-11-09 3 Collector-emitter voltage VCE (V) IC – VCE Base-emitter voltage VBE (V) IC – VBE −60 0 0 Common emitter Ta = 25°C −200 IB = −100 μA −300 −400 −500 −600 −2 −4 −6 −8 −10 −12 −10 −20 −30 −40 −50 −25 25 Ta = 100°C −60 0 0 Common emitter VCE = −5 V −0.2 −0.4 −0.6 −0.8 −1.0 −10 −20 −30 −40 −50 Collector current IC (mA) hFE – IC Collector current IC (mA) VCE (sat) – IC Collector-emitter voltage VCE (V) Safe Operating Area −25 25 Ta = 100°C 1000 10 −0.3 Common emitter VCE = −5 V −0.5 −1 −3 −5 −10 −30 −50 −100 30 50 100 300 500 −25 25 Ta = 100°C −5 −0.01 −0.3 Common emitter IC/IB = 10 −0.5 −1 −3 −5 −10 −30 −50 −100 −0.03 −0.05 −0.1 −0.3 −0.5 −1 −3 Ambient temperature Ta (°C) PC – Ta 1.2 0 0 20 40 60 80 100 120 140 160 0.2 0.4 0.6 0.8 1.0 −50 −1 −3 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. DC operation Ta = 25°C 100 ms* IC max (pulsed)* −5 −10 −30 −50 −100 −300 −3 −5 −10 −30 −100 −300 IC max (continuous) 0.5 s* VCEO max |
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