SSM5N03FE

2007-11-01

1

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

SSM5N03FE

High-Speed Switching Applications

Analog-Switch Applications

• Input impedance is high; driving current is extremely low.

• Can be directly driven by a CMOS device even at low voltage due to low

gate threshold voltage.

• High-speed switching

• Housed in an ultra-small package suitable for high density mounting

(Q1, Q2 Common)

Characteristic

Symbol

Rating

Unit

Drain–source voltage

20

V

Gate–source voltage

10

V

Drain current

100

mA

Drain power dissipation

150

mW

Channel temperature

150

°C

Storage temperature

−55 to 150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Total rating, mounted on an FR4 board

(25.4 mm

× 25.4 mm × 1.6 t, Cu Pad: 0.135 mm

Marking

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-2P1B

Weight: 0.003 g (typ.)

0.3 mm

D A

5

4

1

2

3

54

123

Q1

Q2